Publications

Scientific publications, bibliographic data, and DOI links.

Research article / 2026

LFA: A Lattice Fourier Analyzer for Quantitative In Situ EC-STM of Adsorbate-Substrate Superstructures

R. Lewandków, P. Wira, A. Futyma, R. Wasielewski, T. Kosmala

Advanced Materials Interfaces, e70500

Free, open-source Python application for reproducible reciprocal-space analysis of STM/EC-STM images, including Bragg-peak localization, substrate-anchored calibration, lattice-vector extraction and uncertainty propagation.

Research article / 2026

Band alignment of amorphous Ge2S3 and GaN(0001)

M. Grodzicki, A. Sabik, P. Mazur, A. K. Tołłoczko, R. Lewandków, A. Trembułowicz, D. Majchrzak, J. Serafińczuk, J. Kopaczek, J. Brona, R. Kudrawiec

Journal of Materials Science 61(9), 6042-6052

Study of amorphous Ge2S3 grown on GaN(0001), combining surface, optical and photoelectron spectroscopy to determine band offsets and type-II band alignment.

Research article / 2023

Interactions between PTCDI-C8 and Si(100) Surface

K. Lament, M. Grodzicki, P. Mazur, A. Sabik, R. Lewandków, A. Ciszewski

Crystals 13(3), 441

Photoelectron-spectroscopy study of PTCDI-C8 films on reconstructed Si(100), showing molecule-substrate bonding and electronic-level changes during film growth.

Research article / 2022

Niobium oxides films on GaN: Photoelectron spectroscopy study

R. Lewandków, P. Mazur, M. Grodzicki

Thin Solid Films 763, 139573

Investigation of niobium oxide films grown on p-GaN(0001), including oxygen-ion implantation, annealing and determination of band offsets at the Nb2O5/GaN interface.

Research article / 2022

Obtaining Niobium Nitride on n-GaN by Surface Mediated Nitridation Technique

P. Mazur, A. Sabik, R. Lewandków, A. Trembułowicz, M. Grodzicki

Crystals 12(12), 1847

Study of niobium nitride formation on n-GaN using surface-mediated nitridation, with structural and chemical characterization by XPS, UPS, LEED and STM.

Research article / 2022

Interfacial Polarization of Thin Alq3, Gaq3, and Erq3 Films on GaN(0001)

M. Grodzicki, J. Sito, R. Lewandków, P. Mazur, A. Ciszewski

Materials 15(5), 1671

Electronic-structure analysis of organic layers deposited on GaN(0001), including band-energy diagrams, HOMO positions, vacuum-level shifts and interface dipoles.

Research article / 2022

Properties of Thin MgO Films on 6H-SiC and GaN: Photoelectron Studies

R. Lewandków, M. Grodzicki, P. Mazur, A. Ciszewski

Acta Physica Polonica A 141(2), 116

XPS/UPS study of MgO thin films on p-GaN(0001) and p-6H-SiC(0001), including bandgap estimates and valence/conduction-band offset calculations.

Research article / 2021

Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface

R. Lewandków, P. Mazur, A. Trembułowicz, A. Sabik, R. Wasielewski, M. Grodzicki

Materials 14(15), 4189

Photoelectron-spectroscopy study of MgO/SiC and MgO/graphite/SiC systems, focused on electronic properties, energy-level diagrams and the influence of graphitized SiC surfaces.

Research article / 2021

Photoelectron Spectroscopy Studies on Al2O3 Films on p-GaN(0001)

R. Lewandków, M. Grodzicki, P. Mazur

Surface Review and Letters 28(9)

In situ XPS/UPS analysis of Al2O3 films deposited on p-GaN(0001), including chemical characterization and determination of valence and conduction band offsets.

Research article / 2021

Interface formation of Al2O3 on n-GaN(0001): Photoelectron spectroscopy studies

R. Lewandków, M. Grodzicki, P. Mazur, A. Ciszewski

Surface and Interface Analysis 53(1), 118-124

Study of Al2O3/n-GaN(0001) interface formation under ultra-high vacuum, with electron-affinity, bandgap and band-offset determination from XPS/UPS data.

Research article / 2020

Interface formation of Al2O3 on carbon enriched 6H-SiC(0001): Photoelectron spectroscopy studies

R. Lewandków, M. Grodzicki, P. Mazur, A. Ciszewski

Vacuum 177, 109345

Photoelectron-spectroscopy characterization of Al2O3 layers on carbon-enriched 6H-SiC(0001), including electron-affinity measurements and interface band offsets.

Research article / 2020

Hafnium and Nitrogen Interaction at Hf/GaN(0001) Interface

R. Lewandków, R. Wasielewski, P. Mazur

Surface Review and Letters 27(11), 2050013

XPS/UPS study of hafnium films on n-GaN(0001), showing thermal decomposition of GaN and hafnium interaction with atomic nitrogen from the substrate.